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Formative / In Design
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Datasheet contains the design specifications for product development. Specifications
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make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
?2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
10
www.fairchildsemi.com
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相关代理商/技术参数
FCP190N60_13
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel SuperFET II MOSFET
FCP190N60_GF102
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V TO-220-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / SuperFET2, 190mohm, TO220, F102 Opt, Green EMC
FCP190N60E
功能描述:MOSFET 600V N-CHAN MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCP1913H104G
功能描述:薄膜电容器 .10uF 50V 2% RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104G-E2
功能描述:薄膜电容器 0.1uF 50Volts RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104G-E3
功能描述:薄膜电容器 .10uF 50V 2% RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104J
功能描述:薄膜电容器 1913 50V .1uF RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104J-E2
功能描述:薄膜电容器 1913 50V .1uF RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm